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| an AMP company RF MOSFET Power 100 - 500 MHz Features N-Channel Enhancement DMOS Structure Lower Capacitances for Broadband Mode Device Transistor, lOOW, 28V UF281 OOM Operation Devices High Saturated Output Power Lower Noise Figure Than Competitive Absolute Maximum Ratings at 25C pi Power Dissipation JunctionTemperature Storage Temperature Thermal Resistance 250 200 -55 to +150 0.7 W "C "C "Ciw PD T, T STG El JO I4 II P &w 505 m t.74 a&b, a .m4 am ooc 1 1 1 ale a?4 ace Electrical Characteristics I Parameter at 25C ( Symbol 1 Min 1 Max 1 Units 1 Test Conditions 1 Drain-Source Breakdown Voltage BVDSS `OS5 `GSS V GSCTHI GM C ISS C OS.5 C RSS % 65 3.0 3.0 V mA pA V S pF pF pF dB % dB - Drain-Source LeakageCurrent Gate-Source Leakage Current I V,,=O.O V, I,,=150 v,,=2a.o v,,=20 V,,=lO.O V,,=lO.O v,=2a.o V,s=28.0 mA' v. vo,=o.o v v, v,,=o.o V' mA` mA, ~v,,=l V, 80 ps Pulse' .O Gate Threshold Voltage ForwardTransconductance input Capacitance Output Capacitance Reverse Capacitance Power Gain Drain Efficiency Return Loss Load Mismatch Tolerance * Per Side Specifications 2.0 1.5 6.0 135 90 24 V, 1,,=300.0 V, 1,,=3000.0 v, F=l .o MHz' V, F=l .O MHz' v,,=2a.ov, .OMHZ* F=I V,,=28.0 -v,,=%.O V,,=28.0 v,,=28.0 V, 1,,=600.0 V, 1,,=600.0 V, 1,,=600.0 V. 1,,=600.0 mA, P,,=lOO.O mA, P,,=lOO.O W. F=500 MHz W, F=500 MHz I 10 50 10 3O:l mA, PO,,=1 00.0 W, F=500 MHz mA, P,,,.=100.0 W, F=500 MHz VSWR-T - Subject to Change Without Notice. M/A-COM, inc. RF MOSFET Power Transistor, IOOW, 28V UF281OOM v2.00 Typical Broadband Performance Curves EFFICIENCY P,=lO W I,,=600 vs FREQUENCY mA (Push-Pull POWER OUTPUT vs SUPPLY VOLTAGE P,,,=lO W I,,=600 mA F=500 MHz loo 80. Device) 80 60 20 t 100 200 300 400 so0 14 16 20 24 28 32 FREQUENCY (MHz) SUPPLY VOLTAGE (V) POWER OUTPUT vs POWER INPUT V,,=28 V I,,=600 mA (Push-Pull Device) s e i3 5 fs 0 80 60 40 20 0 0 1 2 4 6 8 10 12 POWER INPUT(W) Specifications Subject to Change Without Notice. M/A-COM, Inc. RF MOSFET Power Transistor, IOOW, 28v UF28100M v2.00 Typical Device Impedance Frequency 100 ( 300 500 (MHz) Z,, (OHMS) 4.5 - j 6.0 1 2.25 - j 1.75 1.5 + j 5.5 V,,=28 V, I,=600 mA, P,,,=lOO.O Watts 1 Z,,,D (OHMS) 14.5+jO.5 7.5+j 1.0 I I 3.5 - j 3.5 Z,, is the series equivalent input impedance of the device from gate to gate. as measured from drain to drain. Z LcAD the pptimum series equivalent is load impedance RF Test Fixture PARTS Cl .c8 c2m c4 c.5 c&c7 CS.ClO Cl1 Cl2 Rl.lU RR3 Ll I2 11 LIST CHIP CAPACITOR. 2.OpF ATC B CHIP CAPACITOR. EOXPF CHIP CAPACTTOR.S7pF ATC B CHIP CAPACITOR. 2WpF ATC B CHIP CAPACXTOR..OlSuF CHIP CAPACTOR. 5BOpFATC B CHIP CAPACITOR. O.BpFATC 8 ELECTROLYI-IC CAPACTTOR.SOuF54 VOLTS RESISTOR. 27 OHM 25 WAH RBSI.TOR. 22K OHM 25 WATT INDUCTOR. S TURNS OF NO. 18 AWG ON `.lO INDUCTOR. 1ONRNS OF NO. 27 AWG ON R4 ,:l BALUN TRANSFORMER 50 OIIM SEMI-RIGID WAX `.cesX3-LONG 72 61 BALUN TRANSFORMER. 25 OHM SEMI-RIGID COAX `370' X 2.3 LONG l3 1:s BALUN TR*NsFoRMER `370 X 25' LONG 10 OHM SEMI-RIGIG COAX 74 1:l BALUN TRAMFORMER. `.oBs x 4. LONG 50 OHM SEMI-RIGID COAX 01 BOARD JlJ2 J3.JdJ5 HEATSMK uF2s1ooM ROGERS 5870. .m?' THICK CONNECIOR. TYPE `N BANANAJACK FINNED ALUMINUM. DiN 73XD1B2-03 Specifications Subject tD Change !ffiiDut Notice. M/A-COM, Inc. |
Price & Availability of UF28100
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